Abstract:
The GaAs MOSFET was designed with an aluminium gate, graphite - coated electrodes, and
silver nanoparticles embedded in the N-type GaAs channel. The device had a channel length
of 1 nm, a width of 10 nm, and an oxide thickness of 0.5 nm. All simulations were performed
at room temperature. MATLAB was used to model the device, combining analytical
equations with spatially resolved numerical methods to accurately capture its electrical
behaviour. Key performance parameters, including threshold voltage, drain current, and
leakage current, were extracted. Analysis drain current of the MOSFET considered the
influence of oxide thickness, temperature, channel length, and width on overall device
performance. The threshold voltage (VTh) of 0.8719 V was obtained and it confirms
enhancement mode operation. The simulated GaAs-based MOSFET exhibited a drain
current of 6.48 mA cm-1 and a transconductance of 275.76 mS cm-1 at a gate-to-source
voltage (VGS) 1.2 V, while the device operating in the saturation region, indicating enhanced
carrier mobility and strong gate control. The overall average mobility value of 0.5934 m2 V-
1s-1 indicates high carrier transport efficiency.
